Electromigration of Cu and Ti atoms and dopant junction profiles in the p+-Si implanted channel under high-density current

H. H. Lin, S. L. Cheng, L. J. Chen

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Ultrafast diffusion of Cu and Ti atoms in p+-Si channel was achieved in samples stressed with high current density. The junction was changed under high current stress and copper silicide was formed in the junction. The current effects of high current on the silicide line formation and symmetrical end-of-range defects elimination near the center of p+-Si channel are discussed.

Original languageEnglish
Pages (from-to)245-247
Number of pages3
JournalMaterials Science in Semiconductor Processing
Volume4
Issue number1-3
DOIs
StatePublished - 6 Feb 2001

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