Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces

H. W. Tseng, C. T. Lu, Y. H. Hsiao, P. L. Liao, Y. C. Chuang, C. Y. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We observed various EM-induced failures in current-stressed Cu/Sn/Cu flip-chip solder joints. EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) on the cathode interface, and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). We believe that the above various EM-induced failure modes were the result of different current-stressing densities and joule heating at the cathode joint interfaces.

Original languageEnglish
Title of host publicationEPTC 2009 - Proceedings of 2009 11th Electronic Packaging Technology Conference
Pages401-405
Number of pages5
DOIs
StatePublished - 2009
Event2009 11th Electronic Packaging Technology Conference, EPTC 2009 - Singapore, Singapore
Duration: 9 Dec 200911 Dec 2009

Publication series

NameProceedings of the Electronic Packaging Technology Conference, EPTC

Conference

Conference2009 11th Electronic Packaging Technology Conference, EPTC 2009
Country/TerritorySingapore
CitySingapore
Period9/12/0911/12/09

Keywords

  • Electromigration
  • Packaging

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