Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces

H. W. Tseng, C. T. Lu, Y. H. Hsiao, P. L. Liao, Y. C. Chuang, T. Y. Chung, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Various EM-induced failures were observed at a current-stressed Cu/Sn/Cu flip-chip solder joint. At the cathode interface, EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). At the anode interface, EM-enhanced Kirkendall voids coalesced into a gap at the Cu3Sn/Cu interface near the current-exit corner. We believe that the above various EM-induced failure modes were resulted from different current-stressing densities at the joint interfaces.

Original languageEnglish
Pages (from-to)1159-1162
Number of pages4
JournalMicroelectronics Reliability
Volume50
Issue number8
DOIs
StatePublished - Aug 2010

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