Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces

H. W. Tseng; C. T. Lu; Y. H. Hsiao; P. L. Liao; Y. C. Chuang; T. Y. Chung; C. Y. Liu

doi:10.1016/j.microrel.2010.05.002

Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces

H. W. Tseng, C. T. Lu, Y. H. Hsiao, P. L. Liao, Y. C. Chuang, T. Y. Chung, C. Y. Liu

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Various EM-induced failures were observed at a current-stressed Cu/Sn/Cu flip-chip solder joint. At the cathode interface, EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). At the anode interface, EM-enhanced Kirkendall voids coalesced into a gap at the Cu₃Sn/Cu interface near the current-exit corner. We believe that the above various EM-induced failure modes were resulted from different current-stressing densities at the joint interfaces.

Original language	English
Pages (from-to)	1159-1162
Number of pages	4
Journal	Microelectronics Reliability
Volume	50
Issue number	8
DOIs	https://doi.org/10.1016/j.microrel.2010.05.002
State	Published - Aug 2010

Access to Document

10.1016/j.microrel.2010.05.002

Cite this

@article{7b0d30864893449f9b7a12fc0cc14d3a,

title = "Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces",

abstract = "Various EM-induced failures were observed at a current-stressed Cu/Sn/Cu flip-chip solder joint. At the cathode interface, EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). At the anode interface, EM-enhanced Kirkendall voids coalesced into a gap at the Cu3Sn/Cu interface near the current-exit corner. We believe that the above various EM-induced failure modes were resulted from different current-stressing densities at the joint interfaces.",

author = "Tseng, {H. W.} and Lu, {C. T.} and Hsiao, {Y. H.} and Liao, {P. L.} and Chuang, {Y. C.} and Chung, {T. Y.} and Liu, {C. Y.}",

note = "Funding Information: The authors would like to acknowledge the financial support of the National Science Council (NSC) and Advanced Semiconductor Engineering Inc. (ASE), Taiwan. ",

year = "2010",

month = aug,

doi = "10.1016/j.microrel.2010.05.002",

language = "???core.languages.en_GB???",

volume = "50",

pages = "1159--1162",

journal = "Microelectronics Reliability",

issn = "0026-2714",

number = "8",

}

TY - JOUR

T1 - Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces

AU - Tseng, H. W.

AU - Lu, C. T.

AU - Hsiao, Y. H.

AU - Liao, P. L.

AU - Chuang, Y. C.

AU - Chung, T. Y.

AU - Liu, C. Y.

N1 - Funding Information: The authors would like to acknowledge the financial support of the National Science Council (NSC) and Advanced Semiconductor Engineering Inc. (ASE), Taiwan.

PY - 2010/8

Y1 - 2010/8

N2 - Various EM-induced failures were observed at a current-stressed Cu/Sn/Cu flip-chip solder joint. At the cathode interface, EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). At the anode interface, EM-enhanced Kirkendall voids coalesced into a gap at the Cu3Sn/Cu interface near the current-exit corner. We believe that the above various EM-induced failure modes were resulted from different current-stressing densities at the joint interfaces.

AB - Various EM-induced failures were observed at a current-stressed Cu/Sn/Cu flip-chip solder joint. At the cathode interface, EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). At the anode interface, EM-enhanced Kirkendall voids coalesced into a gap at the Cu3Sn/Cu interface near the current-exit corner. We believe that the above various EM-induced failure modes were resulted from different current-stressing densities at the joint interfaces.

UR - http://www.scopus.com/inward/record.url?scp=77955424443&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2010.05.002

DO - 10.1016/j.microrel.2010.05.002

M3 - 期刊論文

AN - SCOPUS:77955424443

SN - 0026-2714

VL - 50

SP - 1159

EP - 1162

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 8

ER -

Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces

Abstract

Access to Document

Fingerprint

Cite this