Electromigration-induced failure of Ni/Cu bilayer bond pads joined with Sn(Cu) solders

Y. H. Hsiao, H. W. Tseng, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The effect of electromigration (EM) on Sn(Cu)/Ni/Cu solder joint interfaces under current stressing of 10 4 A/cm 2 at 160°C was studied. In the pure Sn/Ni/Cu case, the interfacial compound layer was mainly the Cu 6Sn 5 compound phase, which suffered serious EM-induced dissolution, eventually resulting in serious Cu-pad consumption. In the Sn-0.7Cu case, a (Cu,Ni) 6Sn 5 interfacial compound layer formed at the joint interface, which showed a strong resistance to EM-induced dissolution. Thus, there was no serious consumption of the Cu pad under current stressing. In the Sn-3.0Cu case, we believe that the massive Cu 6Sn 5 phase in the solder matrix eased possible EM-induced dissolution at the interfacial compound layer due to current stressing.

Original languageEnglish
Pages (from-to)2573-2578
Number of pages6
JournalJournal of Electronic Materials
Volume38
Issue number12
DOIs
StatePublished - Dec 2009

Keywords

  • Electromigration
  • Ni/Cu bilayer UBM

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