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Electromigration failures at Cu/Sn joint interface
C. Y. Liu
Department of Chemical and Materials Engineering
Research output
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peer-review
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Keyphrases
Cu-Sn
100%
Electromigration
100%
Joint Interface
100%
Anode Interface
66%
Current Density
33%
Failure Mode
33%
Flip chip
33%
Cu Pad
33%
High Current Density
33%
Induced Failures
33%
Current Stressing
33%
Cathode Interface
33%
Reliability Issues
33%
Cu3Sn
33%
Maximum Current Density
33%
Kirkendall Voids
33%
Minimum Current
33%
Engineering
Electromigration
100%
Joint Interface
100%
High Current Density
33%
Failure Mode
33%
Reliability Issue
33%
Induced Failure
33%
Corner Joint
33%
Material Science
Density
100%
Anode
50%
Cathode
25%