Abstract
We demonstrate electrical control of the optical sensitivity function in multiple quantum wells (MQWs) for nanoacoustic wave detection. This is realized by bias controlling the quantized level and the quasi-Fermi level of carrier-populated InGaN/GaN MQWs. Experimentally, a strongly bias-dependent optical sensitivity was observed when the optical probe transition was near the quasi-Fermi level, which agrees well with the theoretical prediction.
Original language | English |
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Article number | 143108 |
Journal | Applied Physics Letters |
Volume | 95 |
Issue number | 14 |
DOIs | |
State | Published - 2009 |