Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

Ş Kalem, J. Chyi, C. W. Litton, H. Morkoç, S. C. Kan, A. Yariv

Research output: Contribution to journalArticlepeer-review

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Abstract

InAs epitaxial films have been grown by molecular beam epitaxy on high-resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×104 cm2/(V s) in 6.7-μm-thick (n=2.6×1015 cm -3) unintentionally doped layers. It is shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity-polar optical phonon scattering model in the thin InAs layers. Despite the existence of a large lattice mismatch, the results are indicative of a high quality material.

Original languageEnglish
Pages (from-to)562-564
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number7
DOIs
StatePublished - 1988

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