@inproceedings{8836036eb3db40b3a0e7125f1efad46d,
title = "Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template",
abstract = "Indium doped ZnO films have been successfully deposited on high resistivity GaN(0001) templates by plasma-assisted molecular beam epitaxy. N-type ZnO with carrier concentration of 4.35x1020 cm-3 and electron mobility of 5.7 cm/V-s, leading to resistivity of 2.6x10-3 -cm, are measured by Hall measurements. Under low indium doping flux, the carrier concentration increases accordingly with indium cell temperature until a max concentration is achieved as it might reach the In solubility. Further increase in doping flux leads to lower carrier concentration. X-ray diffraction spectra also show the degraded crystal quality as In doping concentration increases. Low temperature photoluminescence indicates that donor bound excitons dominate the emission while deep level emissions are not present in our In-doped ZnO films.",
keywords = "Indium doped ZnO, carrier concentration, mobility, molecular beam epitaxy, n-type, photoluminescence, resistivity",
author = "Chen, {Cheng Yu} and Siao, {Li Han} and Chyi, {Jen Inn} and Chao, {Chih Kang} and Wu, {Chih Hung}",
year = "2011",
doi = "10.1117/12.877210",
language = "???core.languages.en_GB???",
isbn = "9780819484765",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices VI",
note = "Gallium Nitride Materials and Devices VI ; Conference date: 24-01-2011 Through 27-01-2011",
}