Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template

Cheng Yu Chen, Li Han Siao, Jen Inn Chyi, Chih Kang Chao, Chih Hung Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Indium doped ZnO films have been successfully deposited on high resistivity GaN(0001) templates by plasma-assisted molecular beam epitaxy. N-type ZnO with carrier concentration of 4.35x1020 cm-3 and electron mobility of 5.7 cm/V-s, leading to resistivity of 2.6x10-3 -cm, are measured by Hall measurements. Under low indium doping flux, the carrier concentration increases accordingly with indium cell temperature until a max concentration is achieved as it might reach the In solubility. Further increase in doping flux leads to lower carrier concentration. X-ray diffraction spectra also show the degraded crystal quality as In doping concentration increases. Low temperature photoluminescence indicates that donor bound excitons dominate the emission while deep level emissions are not present in our In-doped ZnO films.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VI
StatePublished - 2011
EventGallium Nitride Materials and Devices VI - San Francisco, CA, United States
Duration: 24 Jan 201127 Jan 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceGallium Nitride Materials and Devices VI
Country/TerritoryUnited States
CitySan Francisco, CA


  • Indium doped ZnO
  • carrier concentration
  • mobility
  • molecular beam epitaxy
  • n-type
  • photoluminescence
  • resistivity


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