Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J. I. Chyi, T. E. Nee, C. C. Chou, C. M. Lee

Research output: Contribution to journalArticlepeer-review

Abstract

GaN p-i-n rectifiers with 4 μm thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defects present. Generally we find that i-layer background doping varies significantly (from <1014 cm-3 to 2-3 × 1016 cm-3), which influences the current conduction mechanism. The hole diffusion lengths were in the range 0.6-0.8 μm, while deep level concentrations were ∼1016 cm-3.

Original languageEnglish
Article number3
Pages (from-to)147-155
Number of pages9
JournalJournal of Electronic Materials
Volume30
Issue number3
DOIs
StatePublished - Mar 2001

Keywords

  • C-V measurements
  • Deep centers
  • DLTS
  • GaN
  • I-V measurements
  • P-i-n rectifiers

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