Electrical characteristics of InSb-GaAs heterojunctions

J. I. Chyi; D. Mui; J. Chen; H. Morkoç

doi:10.1016/0038-1101(91)90013-O

Electrical characteristics of InSb-GaAs heterojunctions

J. I. Chyi, D. Mui, J. Chen, H. Morkoç

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

InSb-GaAs p-n, p-p, and n-n heterojunctions prepared by molecular beam epitaxy have been characterized using current-voltage and capacitance-voltage measurements. All the junctions exhibit excellent rectifying characteristics. Despite a 14.6% lattice mismatch, excellent diode characteristics with ideality factors as small as 1.04 and low leakage currents are observed. From capacitance-voltage measurements, the valence band discontinuity of InSb-GaAs junction is determined to be between 0.50 and 0.64 eV.

Original language	English
Pages (from-to)	747-750
Number of pages	4
Journal	Solid-State Electronics
Volume	34
Issue number	7
DOIs	https://doi.org/10.1016/0038-1101(91)90013-O
State	Published - Jul 1991

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title = "Electrical characteristics of InSb-GaAs heterojunctions",

abstract = "InSb-GaAs p-n, p-p, and n-n heterojunctions prepared by molecular beam epitaxy have been characterized using current-voltage and capacitance-voltage measurements. All the junctions exhibit excellent rectifying characteristics. Despite a 14.6% lattice mismatch, excellent diode characteristics with ideality factors as small as 1.04 and low leakage currents are observed. From capacitance-voltage measurements, the valence band discontinuity of InSb-GaAs junction is determined to be between 0.50 and 0.64 eV.",

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T1 - Electrical characteristics of InSb-GaAs heterojunctions

AU - Chyi, J. I.

AU - Mui, D.

AU - Chen, J.

AU - Morkoç, H.

PY - 1991/7

Y1 - 1991/7

N2 - InSb-GaAs p-n, p-p, and n-n heterojunctions prepared by molecular beam epitaxy have been characterized using current-voltage and capacitance-voltage measurements. All the junctions exhibit excellent rectifying characteristics. Despite a 14.6% lattice mismatch, excellent diode characteristics with ideality factors as small as 1.04 and low leakage currents are observed. From capacitance-voltage measurements, the valence band discontinuity of InSb-GaAs junction is determined to be between 0.50 and 0.64 eV.

AB - InSb-GaAs p-n, p-p, and n-n heterojunctions prepared by molecular beam epitaxy have been characterized using current-voltage and capacitance-voltage measurements. All the junctions exhibit excellent rectifying characteristics. Despite a 14.6% lattice mismatch, excellent diode characteristics with ideality factors as small as 1.04 and low leakage currents are observed. From capacitance-voltage measurements, the valence band discontinuity of InSb-GaAs junction is determined to be between 0.50 and 0.64 eV.

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U2 - 10.1016/0038-1101(91)90013-O

DO - 10.1016/0038-1101(91)90013-O

M3 - 期刊論文

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VL - 34

SP - 747

EP - 750

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7

ER -

Electrical characteristics of InSb-GaAs heterojunctions

Abstract

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