Electrical characteristics of InSb-GaAs heterojunctions

J. I. Chyi, D. Mui, J. Chen, H. Morkoç

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

InSb-GaAs p-n, p-p, and n-n heterojunctions prepared by molecular beam epitaxy have been characterized using current-voltage and capacitance-voltage measurements. All the junctions exhibit excellent rectifying characteristics. Despite a 14.6% lattice mismatch, excellent diode characteristics with ideality factors as small as 1.04 and low leakage currents are observed. From capacitance-voltage measurements, the valence band discontinuity of InSb-GaAs junction is determined to be between 0.50 and 0.64 eV.

Original languageEnglish
Pages (from-to)747-750
Number of pages4
JournalSolid-State Electronics
Volume34
Issue number7
DOIs
StatePublished - Jul 1991

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