Electrical and optical properties of TiO2-doped ZnO films prepared by radio-frequency magnetron sputtering

Jeng Lin Chung; Jyh Chen Chen; Chung Jen Tseng

doi:10.1016/j.jpcs.2007.07.040

Electrical and optical properties of TiO₂-doped ZnO films prepared by radio-frequency magnetron sputtering

Jeng Lin Chung, Jyh Chen Chen, Chung Jen Tseng

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

TiO₂-doped zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering in argon gas. The electrical and optical properties in the TiO₂-doped ZnO films as functions of the TiO₂ content were investigated. It was observed that the (0 0 2) preferred orientation had a significant value of 34-35° for a Ti content of 0.71, 1.38, and 1.97 at%. When the Ti content of the TiO₂-doped ZnO films was above 2.81 at%, the films became amorphous. The 1.38 at% TiO₂-doped ZnO films had the lowest resistivity: 9.02×10^-3 Ω cm. All of the TiO₂-doped ZnO films had 85% transmittance in the visible wavelength range. The optical energy band gap increased from 3.33 eV for 0.71 at% Ti to 3.43 eV for 3.43 at% Ti.

Original language	English
Pages (from-to)	535-539
Number of pages	5
Journal	Journal of Physics and Chemistry of Solids
Volume	69
Issue number	2-3
DOIs	https://doi.org/10.1016/j.jpcs.2007.07.040
State	Published - Feb 2008

Keywords

A. Semiconductors
A. Thin films
D. Electrical properties

Access to Document

10.1016/j.jpcs.2007.07.040

Cite this

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title = "Electrical and optical properties of TiO2-doped ZnO films prepared by radio-frequency magnetron sputtering",

abstract = "TiO2-doped zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering in argon gas. The electrical and optical properties in the TiO2-doped ZnO films as functions of the TiO2 content were investigated. It was observed that the (0 0 2) preferred orientation had a significant value of 34-35° for a Ti content of 0.71, 1.38, and 1.97 at%. When the Ti content of the TiO2-doped ZnO films was above 2.81 at%, the films became amorphous. The 1.38 at% TiO2-doped ZnO films had the lowest resistivity: 9.02×10-3 Ω cm. All of the TiO2-doped ZnO films had 85% transmittance in the visible wavelength range. The optical energy band gap increased from 3.33 eV for 0.71 at% Ti to 3.43 eV for 3.43 at% Ti.",

keywords = "A. Semiconductors, A. Thin films, D. Electrical properties",

author = "Chung, {Jeng Lin} and Chen, {Jyh Chen} and Tseng, {Chung Jen}",

note = "Funding Information: The authors gratefully acknowledge the support of the National Science Council of the Republic of China for this project, through Grant no. NSC 94-2623-7-008-006-AT.",

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TY - JOUR

T1 - Electrical and optical properties of TiO2-doped ZnO films prepared by radio-frequency magnetron sputtering

AU - Chung, Jeng Lin

AU - Chen, Jyh Chen

AU - Tseng, Chung Jen

N1 - Funding Information: The authors gratefully acknowledge the support of the National Science Council of the Republic of China for this project, through Grant no. NSC 94-2623-7-008-006-AT.

PY - 2008/2

Y1 - 2008/2

N2 - TiO2-doped zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering in argon gas. The electrical and optical properties in the TiO2-doped ZnO films as functions of the TiO2 content were investigated. It was observed that the (0 0 2) preferred orientation had a significant value of 34-35° for a Ti content of 0.71, 1.38, and 1.97 at%. When the Ti content of the TiO2-doped ZnO films was above 2.81 at%, the films became amorphous. The 1.38 at% TiO2-doped ZnO films had the lowest resistivity: 9.02×10-3 Ω cm. All of the TiO2-doped ZnO films had 85% transmittance in the visible wavelength range. The optical energy band gap increased from 3.33 eV for 0.71 at% Ti to 3.43 eV for 3.43 at% Ti.

AB - TiO2-doped zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering in argon gas. The electrical and optical properties in the TiO2-doped ZnO films as functions of the TiO2 content were investigated. It was observed that the (0 0 2) preferred orientation had a significant value of 34-35° for a Ti content of 0.71, 1.38, and 1.97 at%. When the Ti content of the TiO2-doped ZnO films was above 2.81 at%, the films became amorphous. The 1.38 at% TiO2-doped ZnO films had the lowest resistivity: 9.02×10-3 Ω cm. All of the TiO2-doped ZnO films had 85% transmittance in the visible wavelength range. The optical energy band gap increased from 3.33 eV for 0.71 at% Ti to 3.43 eV for 3.43 at% Ti.

KW - A. Semiconductors

KW - A. Thin films

KW - D. Electrical properties

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DO - 10.1016/j.jpcs.2007.07.040

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VL - 69

SP - 535

EP - 539

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

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