Electrical and optical characterization of boron-doped microcrystalline SiH films prepared by ECR-CVD for solar cell

In this study, boron doped p-type hydrogenated silicon films were prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) at lower temperature (<200°C) for solar cell. In order to analyze the optical and electrical property of the film, the film's absorption coefficient and imaginary part of the pseudo-dielectric function 〈ε₂〈 as well as resistivity and dopant concentration were obtained by spectroscopic ellipsometry (SE) and Hall measurement respectively. The Optical Emission Spectroscopy (OES) is used as a diagnostic tool for analyzing the plasma spectra, and we try to find out the correlation between plasma spectra and film properties. Based on the above results, we can build up the database from plasma spectra corresponding to film properties, and the processing time required for optimization of process can be reduced significantly. In addition, it was found that the applications of these results can be used for the phase transition in the boron doped hydrogenated silicon film from amorphous to microcrystalline structure.