Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer

Chien Cheng Yang, Meng Chyi Wu, Chang Cheng Chuo, Jen Inn Chyi, Chia Feng Lin, Gou Chung Chi

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The GaN homo-junction light-emitting diodes (LEDs) with multiple-pair buffer layer (MBL) were grown by metalorganic vapor phase epitaxy on sapphire substrates. Each pair of the buffer layer consists of a 300 angstroms thick GaN nucleation layer grown at a low temperature of 525 °C and a 4 μm thick GaN epitaxial layer grown at a high temperature of 1025 °C. As compared to the conventional growth without buffer layer, the GaN LEDs with MBL will exhibit a low turn-on voltage, stronger electroluminescence intensity, and higher light output power. It is attributed to the effective reduction in the propagation of defects and dislocations near the p-n junction for the LEDs with MBL.

Original languageEnglish
Pages (from-to)1483-1486
Number of pages4
JournalSolid-State Electronics
Volume44
Issue number8
DOIs
StatePublished - 1 Aug 2000

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