Electrical and Optical Characteristics of GaAs0.6P0.4 LEDs Fabricated by Zn Semi‐Closed Diffusion Method

J. C. Lou, M. S. Lin, J. I. Chyi, M. D. Lin, S. Sche

Research output: Contribution to journalArticlepeer-review

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Zinc doped GaAs0.6P0.4 LEDs are fabricated by semi‐closed diffusion method to achieve the junction depth of 3.3 μm in the temperature range from 600 to 800 °C. Optical and electrical characteristics evaluation indicate that the degradation of red light emission in GaAs0.6P0.4 LEDs is mainly due to deep trapping levels. DLTS results also show that the Ev + 0.64 eV hole trap plays the major role in forming the radiative efficiency degradation of the red light emission in GaAs0.6P0.4 LEDs.

Original languageEnglish
Pages (from-to)741-747
Number of pages7
JournalPhysica Status Solidi (A) Applied Research
Issue number2
StatePublished - 16 Jun 1983


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