Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Jihyun Kim, F. Ren, G. T. Thaler, R. M. Frazier, B. P. Gila, C. R. Abernathy, S. J. Pearton, I. A. Buyanova, G. Y. Rudko, W. M. Chen, C. C. Pan, G. T. Chen, J. I. Chyi, J. M. Zavada

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called "spin-LEDs"). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn, This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.

Original languageEnglish
Pages (from-to)241-247
Number of pages7
JournalJournal of Electronic Materials
Volume33
Issue number3
DOIs
StatePublished - Mar 2004

Keywords

  • Electroluminescence (EL)
  • GaN/InGaN
  • Light-emitting diodes (LEDs)

Fingerprint

Dive into the research topics of 'Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes'. Together they form a unique fingerprint.

Cite this