Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. Kim, F. Ren, M. E. Overberg, G. T. Thaler, C. R. Abernathy, S. J. Pearton, C. M. Lee, J. I. Chyi, R. G. Wilson, J. M. Zavada

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