Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection

W. M. Chen, I. A. Buyanova, K. Nishibayashi, K. Kayanuma, K. Seo, A. Murayama, Y. Oka, G. Thaler, R. Frazier, C. R. Abernathy, F. Ren, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

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Physics

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Material Science