Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection

W. M. Chen, I. A. Buyanova, K. Nishibayashi, K. Kayanuma, K. Seo, A. Murayama, Y. Oka, G. Thaler, R. Frazier, C. R. Abernathy, F. Ren, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

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19 Scopus citations

Abstract

Transient magneto-optical spectroscopy of InGaNGaN and InGaNGaMnN quantum wells reveals a spin relaxation process with a characteristic time of 50 ps. We show that the observed spin relaxation is mediated by spin flips of individual carriers rather than by direct exciton spin flips, and is proposed to occur near the bottom of the exciton band (K=0). Nearly complete thermalization between spin sublevels of the excitons, observed immediately after the pulsed photoexcitation, is attributed to even faster spin relaxation of photogenerated hot carriers/excitons accompanying momentum and energy relaxation at high K vectors.

Original languageEnglish
Article number192107
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number19
DOIs
StatePublished - 7 Nov 2005

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