Efficient CsPbBr3 Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

Pao Hsun Huang; Sih An Chen; Li Wei Chao; Jia Xun Xie; Ching Yu Liao; Zong Liang Tseng; Sheng Hui Chen

doi:10.3390/ma16176060

Efficient CsPbBr₃ Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

Pao Hsun Huang, Sih An Chen, Li Wei Chao, Jia Xun Xie, Ching Yu Liao, Zong Liang Tseng, Sheng Hui Chen

Department of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr₃ QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m² and an external quantum efficiency (EQE) up to 3.63%.

Original language	English
Article number	6060
Journal	Materials
Volume	16
Issue number	17
DOIs	https://doi.org/10.3390/ma16176060
State	Published - Sep 2023

Keywords

CsPbBr quantum dot
NiO
light-emitting diode
sputter

Access to Document

10.3390/ma16176060

Cite this

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title = "Efficient CsPbBr3 Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers",

abstract = "Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices{\textquoteright} performance of NiO-based CsPbBr3 QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m2 and an external quantum efficiency (EQE) up to 3.63%.",

keywords = "CsPbBr quantum dot, NiO, light-emitting diode, sputter",

author = "Huang, {Pao Hsun} and Chen, {Sih An} and Chao, {Li Wei} and Xie, {Jia Xun} and Liao, {Ching Yu} and Tseng, {Zong Liang} and Chen, {Sheng Hui}",

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T1 - Efficient CsPbBr3 Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

AU - Huang, Pao Hsun

AU - Chen, Sih An

AU - Chao, Li Wei

AU - Xie, Jia Xun

AU - Liao, Ching Yu

AU - Tseng, Zong Liang

AU - Chen, Sheng Hui

PY - 2023/9

Y1 - 2023/9

N2 - Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr3 QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m2 and an external quantum efficiency (EQE) up to 3.63%.

AB - Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr3 QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m2 and an external quantum efficiency (EQE) up to 3.63%.

KW - CsPbBr quantum dot

KW - NiO

KW - light-emitting diode

KW - sputter

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