Efficient CsPbBr3 Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers

Pao Hsun Huang, Sih An Chen, Li Wei Chao, Jia Xun Xie, Ching Yu Liao, Zong Liang Tseng, Sheng Hui Chen

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices’ performance of NiO-based CsPbBr3 QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m2 and an external quantum efficiency (EQE) up to 3.63%.

Original languageEnglish
Article number6060
JournalMaterials
Volume16
Issue number17
DOIs
StatePublished - Sep 2023

Keywords

  • CsPbBr quantum dot
  • NiO
  • light-emitting diode
  • sputter

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