Efficiency improvement of GaN light emitting diodes on Si by double island growth method

Keyphrases

• Growth Method 100%
• Efficiency Improvement 100%
• GaN-based Light-emitting Diodes 100%
• Island Growth 100%
• Double Islands 100%
• Power Output 33%
• Dislocation Density 33%
• Light-emitting Diodes 33%
• Silicon Substrate 33%
• Injection Current 33%
• Metal Organic Vapor Phase Epitaxy (MOVPE) 33%
• Threading Dislocation Density 33%
• Island Structure 33%
• Wall-plug Efficiency 33%
• GaN Epilayer 33%
• (111) Silicon 33%

Engineering

• Dislocation Density 100%
• Light-Emitting Diode 100%
• Growth Method 100%
• Output Power 50%
• Silicon Substrate 50%
• Current Injection 50%
• Threading Dislocation 50%
• Plug Efficiency 50%

Material Science

• Density 100%
• Light-Emitting Diode 100%
• Silicon 50%
• Epilayers 50%
• Vapor Phase Epitaxy 50%