Efficiency improvement of GaN light emitting diodes on Si by double island growth method

Hsueh Hsing Liu; Lung Chieh Cheng; Nien Tze Yeh; Chen Zi Liao; Jen Inn Chyi

doi:10.1109/CLEOPR.2013.6600221

Efficiency improvement of GaN light emitting diodes on Si by double island growth method

Hsueh Hsing Liu, Lung Chieh Cheng, Nien Tze Yeh, Chen Zi Liao, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This paper reports the double island growth method to reduce threading dislocation density in GaN epilayers grown on (111) silicon substrates by metal-organic vapor phase epitaxy. The overall dislocation density can be effectively reduced to 2.6×10⁹ cm^-2. The output power and wall-plug efficiency are enhanced by about 27 % and 34.5 % at an injection current of 20 mA for the light emitting diodes (LEDs) using the new double island structure.

Original language	English
Title of host publication	2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
DOIs	https://doi.org/10.1109/CLEOPR.2013.6600221
State	Published - 2013
Event	10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan Duration: 30 Jun 2013 → 4 Jul 2013

Publication series

Name	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Conference

Conference	10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
Country/Territory	Japan
City	Kyoto
Period	30/06/13 → 4/07/13

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10.1109/CLEOPR.2013.6600221

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Liu, H. H., Cheng, L. C., Yeh, N. T., Liao, C. Z., & Chyi, J. I. (2013). Efficiency improvement of GaN light emitting diodes on Si by double island growth method. In 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 Article 6600221 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2013.6600221

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title = "Efficiency improvement of GaN light emitting diodes on Si by double island growth method",

abstract = "This paper reports the double island growth method to reduce threading dislocation density in GaN epilayers grown on (111) silicon substrates by metal-organic vapor phase epitaxy. The overall dislocation density can be effectively reduced to 2.6×109 cm-2. The output power and wall-plug efficiency are enhanced by about 27 % and 34.5 % at an injection current of 20 mA for the light emitting diodes (LEDs) using the new double island structure.",

author = "Liu, {Hsueh Hsing} and Cheng, {Lung Chieh} and Yeh, {Nien Tze} and Liao, {Chen Zi} and Chyi, {Jen Inn}",

year = "2013",

doi = "10.1109/CLEOPR.2013.6600221",

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isbn = "9781467364751",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

booktitle = "2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013",

note = "10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 ; Conference date: 30-06-2013 Through 04-07-2013",

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Liu, HH, Cheng, LC, Yeh, NT, Liao, CZ & Chyi, JI 2013, Efficiency improvement of GaN light emitting diodes on Si by double island growth method. in 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013., 6600221, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013, Kyoto, Japan, 30/06/13. https://doi.org/10.1109/CLEOPR.2013.6600221

Efficiency improvement of GaN light emitting diodes on Si by double island growth method. / Liu, Hsueh Hsing; Cheng, Lung Chieh; Yeh, Nien Tze et al.
2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013. 2013. 6600221 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - This paper reports the double island growth method to reduce threading dislocation density in GaN epilayers grown on (111) silicon substrates by metal-organic vapor phase epitaxy. The overall dislocation density can be effectively reduced to 2.6×109 cm-2. The output power and wall-plug efficiency are enhanced by about 27 % and 34.5 % at an injection current of 20 mA for the light emitting diodes (LEDs) using the new double island structure.

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SN - 9781467364751

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

BT - 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013

T2 - 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013

Y2 - 30 June 2013 through 4 July 2013

ER -

Efficiency improvement of GaN light emitting diodes on Si by double island growth method

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