Efficiency enhancement of InGaN LEDs with an n-type AlGaN/GaN/InGaN current spreading layer

Hsueh Hsing Liu, Peng Ren Chen, Geng Yen Lee, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

This letter reports an InGaN light-emitting diode (LED) structure that has an n-type Al0.1Ga0.9N/GaN/In0.06Ga 0.94N current spreading layer under its multiple-quantum-well active region. As indicated by simulation, the Al0.1Ga0.9N/GaN/ In0.06Ga0.94N heterostructure induces a higher electron concentration than an n-AlGaN/GaN cladding layer and an n-GaN/InGaN current spreading layer that are used in conventional LEDs. As a result, the proposed n-type spreading layer is expected to alleviate current crowding and improve external quantum efficiency. Experimentally, the light output uniformity across the chips is greatly improved. The output power and wall-plug efficiency are enhanced by about 18.2% and 22.2% at an injection current of 350 mA for the LEDs employing the new double-heterostructure current spreading layer.

Original languageEnglish
Article number6003754
Pages (from-to)1409-1411
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number10
DOIs
StatePublished - Oct 2011

Keywords

  • GaN
  • InGaN
  • light-emitting diodes (LEDs)

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