Efficiency enhancement of InGaN LEDs with an n-type AlGaN/GaN/InGaN current spreading layer

Hsueh Hsing Liu; Peng Ren Chen; Geng Yen Lee; Jen Inn Chyi

doi:10.1109/LED.2011.2163490

Efficiency enhancement of InGaN LEDs with an n-type AlGaN/GaN/InGaN current spreading layer

Hsueh Hsing Liu, Peng Ren Chen, Geng Yen Lee, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

This letter reports an InGaN light-emitting diode (LED) structure that has an n-type Al_0.1Ga_0.9N/GaN/In_0.06Ga _0.94N current spreading layer under its multiple-quantum-well active region. As indicated by simulation, the Al_0.1Ga_0.9N/GaN/ In_0.06Ga_0.94N heterostructure induces a higher electron concentration than an n-AlGaN/GaN cladding layer and an n-GaN/InGaN current spreading layer that are used in conventional LEDs. As a result, the proposed n-type spreading layer is expected to alleviate current crowding and improve external quantum efficiency. Experimentally, the light output uniformity across the chips is greatly improved. The output power and wall-plug efficiency are enhanced by about 18.2% and 22.2% at an injection current of 350 mA for the LEDs employing the new double-heterostructure current spreading layer.

Original language	English
Article number	6003754
Pages (from-to)	1409-1411
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	10
DOIs	https://doi.org/10.1109/LED.2011.2163490
State	Published - Oct 2011

Keywords

GaN
InGaN
light-emitting diodes (LEDs)

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10.1109/LED.2011.2163490

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title = "Efficiency enhancement of InGaN LEDs with an n-type AlGaN/GaN/InGaN current spreading layer",

abstract = "This letter reports an InGaN light-emitting diode (LED) structure that has an n-type Al0.1Ga0.9N/GaN/In0.06Ga 0.94N current spreading layer under its multiple-quantum-well active region. As indicated by simulation, the Al0.1Ga0.9N/GaN/ In0.06Ga0.94N heterostructure induces a higher electron concentration than an n-AlGaN/GaN cladding layer and an n-GaN/InGaN current spreading layer that are used in conventional LEDs. As a result, the proposed n-type spreading layer is expected to alleviate current crowding and improve external quantum efficiency. Experimentally, the light output uniformity across the chips is greatly improved. The output power and wall-plug efficiency are enhanced by about 18.2% and 22.2% at an injection current of 350 mA for the LEDs employing the new double-heterostructure current spreading layer.",

keywords = "GaN, InGaN, light-emitting diodes (LEDs)",

author = "Liu, {Hsueh Hsing} and Chen, {Peng Ren} and Lee, {Geng Yen} and Chyi, {Jen Inn}",

note = "Funding Information: Manuscript received July 8, 2010; revised July 20, 2011; accepted July 22, 2011. Date of publication August 29, 2011; date of current version September 28, 2011. This work was supported by the National Science Council of Republic of China under Contract NSC 96-2628-E-008-072-MY3. The review of this letter was arranged by Editor C. Jagadish.",

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T1 - Efficiency enhancement of InGaN LEDs with an n-type AlGaN/GaN/InGaN current spreading layer

AU - Liu, Hsueh Hsing

AU - Chen, Peng Ren

AU - Lee, Geng Yen

AU - Chyi, Jen Inn

N1 - Funding Information: Manuscript received July 8, 2010; revised July 20, 2011; accepted July 22, 2011. Date of publication August 29, 2011; date of current version September 28, 2011. This work was supported by the National Science Council of Republic of China under Contract NSC 96-2628-E-008-072-MY3. The review of this letter was arranged by Editor C. Jagadish.

PY - 2011/10

Y1 - 2011/10

N2 - This letter reports an InGaN light-emitting diode (LED) structure that has an n-type Al0.1Ga0.9N/GaN/In0.06Ga 0.94N current spreading layer under its multiple-quantum-well active region. As indicated by simulation, the Al0.1Ga0.9N/GaN/ In0.06Ga0.94N heterostructure induces a higher electron concentration than an n-AlGaN/GaN cladding layer and an n-GaN/InGaN current spreading layer that are used in conventional LEDs. As a result, the proposed n-type spreading layer is expected to alleviate current crowding and improve external quantum efficiency. Experimentally, the light output uniformity across the chips is greatly improved. The output power and wall-plug efficiency are enhanced by about 18.2% and 22.2% at an injection current of 350 mA for the LEDs employing the new double-heterostructure current spreading layer.

AB - This letter reports an InGaN light-emitting diode (LED) structure that has an n-type Al0.1Ga0.9N/GaN/In0.06Ga 0.94N current spreading layer under its multiple-quantum-well active region. As indicated by simulation, the Al0.1Ga0.9N/GaN/ In0.06Ga0.94N heterostructure induces a higher electron concentration than an n-AlGaN/GaN cladding layer and an n-GaN/InGaN current spreading layer that are used in conventional LEDs. As a result, the proposed n-type spreading layer is expected to alleviate current crowding and improve external quantum efficiency. Experimentally, the light output uniformity across the chips is greatly improved. The output power and wall-plug efficiency are enhanced by about 18.2% and 22.2% at an injection current of 350 mA for the LEDs employing the new double-heterostructure current spreading layer.

KW - GaN

KW - InGaN

KW - light-emitting diodes (LEDs)

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DO - 10.1109/LED.2011.2163490

M3 - 期刊論文

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VL - 32

SP - 1409

EP - 1411

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 10

M1 - 6003754

ER -

Efficiency enhancement of InGaN LEDs with an n-type AlGaN/GaN/InGaN current spreading layer

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