Efficiency dip observed with InGaN-based multiple quantum well solar cells

K. Y. Lai; G. J. Lin; Yuh Renn Wu; Meng Lun Tsai; Jr Hau He

doi:10.1364/OE.22.0A1753

Efficiency dip observed with InGaN-based multiple quantum well solar cells

K. Y. Lai, G. J. Lin, Yuh Renn Wu, Meng Lun Tsai, Jr Hau He

Department of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The dip of external quantum efficiency (EQE) is observed on In_0.15Ga_0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

Original language	English
Pages (from-to)	A1753-A1760
Journal	Optics Express
Volume	22
Issue number	25
DOIs	https://doi.org/10.1364/OE.22.0A1753
State	Published - 15 Dec 2014

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title = "Efficiency dip observed with InGaN-based multiple quantum well solar cells",

abstract = "The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.",

author = "Lai, {K. Y.} and Lin, {G. J.} and Wu, {Yuh Renn} and Tsai, {Meng Lun} and He, {Jr Hau}",

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T1 - Efficiency dip observed with InGaN-based multiple quantum well solar cells

AU - Lai, K. Y.

AU - Lin, G. J.

AU - Wu, Yuh Renn

AU - Tsai, Meng Lun

AU - He, Jr Hau

PY - 2014/12/15

Y1 - 2014/12/15

N2 - The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

AB - The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

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U2 - 10.1364/OE.22.0A1753

DO - 10.1364/OE.22.0A1753

M3 - 期刊論文

AN - SCOPUS:84919664384

SN - 1094-4087

VL - 22

SP - A1753-A1760

JO - Optics Express

JF - Optics Express

IS - 25

ER -

Efficiency dip observed with InGaN-based multiple quantum well solar cells

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