Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

C. C. Chuo, C. M. Lee, T. E. Nee, J. I. Chyi

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Abstract

Postgrowth thermal annealing was applied to investigate the optical and structural properties of InxGa1-xN/GaN multiple quantum wells with high InN mole fraction. Thermal annealing at 900°C results in a twentyfold increase of the integrated photoluminescence intensity. Photoluminescence emission is also improved from a broad band for the as-grown sample to two dominant peaks for the annealed sample. Cross-sectional transmission electron microscopy shows the existence of quantum dot-like islands in the wells for the as-grown sample but these islands are significantly reduced after thermal annealing at 900°C.

Original languageEnglish
Pages (from-to)3902-3904
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number26
DOIs
StatePublished - 26 Jun 2000

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