Effects of the hot zone design during the growth of large size multi-crystalline silicon ingots by the seeded directional solidification process

Thi Hoai Thu Nguyen, Szu Han Liao, Jyh Chen Chen, Chun Hung Chen, Yen Hao Huang, Cheng Jui Yang, Huang Wei Lin, Huy Bich Nguyen

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

In this study, the installation of insulation blocks in the hot zone is utilized to assist in the growth of multi-crystalline silicon ingots with 800 kg of silicon charge using the seeded directional solidification method. A transient global numerical simulation is carried out to investigate the heat and mass transport during growth process. At a higher solidification fraction, lower concavity of the crystal–melt interface near the crucible wall can be obtained as compared to the standard model. The lowest concavity and highest energy saving is achieved when insulation blocks are added to the side of a directional solidification block and to the low part of the side insulation. The simulation results for this design also show a reduction of the melt velocity. The average oxygen concentration is slightly higher along the crystal–melt interface, compared to the standard one.

Original languageEnglish
Pages (from-to)27-34
Number of pages8
JournalJournal of Crystal Growth
Volume452
DOIs
StatePublished - 15 Oct 2016

Keywords

  • A1. Computer simulation
  • A1. Directional solidification
  • A2. Seed crystals
  • B3. Solar cells

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