Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si

L. W. Cheng; H. M. Lo; S. L. Cheng; L. J. Chen; C. J. Tsai

doi:10.1016/j.msea.2005.05.106

Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si

L. W. Cheng, H. M. Lo, S. L. Cheng, L. J. Chen, C. J. Tsai

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si have been investigated. Compressive stress induced by backside SiO₂ film on the silicon substrate was found to retard significantly the formation of Ni₂Si, NiSi and NiSi₂ on (0 0 1)Si. On the other hand, tensile stress induced by backside Si₃N₄ and CoSi₂ films was found to enhance the formation of nickel silicides on (0 0 1)Si. The thickness of growing nickel silicide thin films was found to increase and decrease with tensile and compressive stress level, respectively. The effects of stress on the formation and growth of nickel silicides are attributed to the variation in the diffusion of nickel atoms through Ni/Si and nickel silicide/Si interfaces.

Original language	English
Pages (from-to)	217-222
Number of pages	6
Journal	Materials Science and Engineering A
Volume	409
Issue number	1-2
DOIs	https://doi.org/10.1016/j.msea.2005.05.106
State	Published - 15 Nov 2005

Keywords

Ni
Ni silicide
Stress

Access to Document

10.1016/j.msea.2005.05.106

Cite this

@article{0b51a2a4c87e4f08850029a705615516,

title = "Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si",

abstract = "Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si have been investigated. Compressive stress induced by backside SiO2 film on the silicon substrate was found to retard significantly the formation of Ni2Si, NiSi and NiSi2 on (0 0 1)Si. On the other hand, tensile stress induced by backside Si3N4 and CoSi2 films was found to enhance the formation of nickel silicides on (0 0 1)Si. The thickness of growing nickel silicide thin films was found to increase and decrease with tensile and compressive stress level, respectively. The effects of stress on the formation and growth of nickel silicides are attributed to the variation in the diffusion of nickel atoms through Ni/Si and nickel silicide/Si interfaces.",

keywords = "Ni, Ni silicide, Stress",

author = "Cheng, {L. W.} and Lo, {H. M.} and Cheng, {S. L.} and Chen, {L. J.} and Tsai, {C. J.}",

note = "Funding Information: The research was supported by the Republic of China National Science Council grant no. NSC 91-2215-E-007-002.",

year = "2005",

month = nov,

day = "15",

doi = "10.1016/j.msea.2005.05.106",

language = "???core.languages.en_GB???",

volume = "409",

pages = "217--222",

journal = "Materials Science and Engineering A",

issn = "0921-5093",

number = "1-2",

}

TY - JOUR

T1 - Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si

AU - Cheng, L. W.

AU - Lo, H. M.

AU - Cheng, S. L.

AU - Chen, L. J.

AU - Tsai, C. J.

N1 - Funding Information: The research was supported by the Republic of China National Science Council grant no. NSC 91-2215-E-007-002.

PY - 2005/11/15

Y1 - 2005/11/15

N2 - Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si have been investigated. Compressive stress induced by backside SiO2 film on the silicon substrate was found to retard significantly the formation of Ni2Si, NiSi and NiSi2 on (0 0 1)Si. On the other hand, tensile stress induced by backside Si3N4 and CoSi2 films was found to enhance the formation of nickel silicides on (0 0 1)Si. The thickness of growing nickel silicide thin films was found to increase and decrease with tensile and compressive stress level, respectively. The effects of stress on the formation and growth of nickel silicides are attributed to the variation in the diffusion of nickel atoms through Ni/Si and nickel silicide/Si interfaces.

AB - Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si have been investigated. Compressive stress induced by backside SiO2 film on the silicon substrate was found to retard significantly the formation of Ni2Si, NiSi and NiSi2 on (0 0 1)Si. On the other hand, tensile stress induced by backside Si3N4 and CoSi2 films was found to enhance the formation of nickel silicides on (0 0 1)Si. The thickness of growing nickel silicide thin films was found to increase and decrease with tensile and compressive stress level, respectively. The effects of stress on the formation and growth of nickel silicides are attributed to the variation in the diffusion of nickel atoms through Ni/Si and nickel silicide/Si interfaces.

KW - Ni

KW - Ni silicide

KW - Stress

UR - http://www.scopus.com/inward/record.url?scp=28544446238&partnerID=8YFLogxK

U2 - 10.1016/j.msea.2005.05.106

DO - 10.1016/j.msea.2005.05.106

M3 - 期刊論文

AN - SCOPUS:28544446238

SN - 0921-5093

VL - 409

SP - 217

EP - 222

JO - Materials Science and Engineering A

JF - Materials Science and Engineering A

IS - 1-2

ER -

Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si

Abstract

Keywords

Access to Document

Fingerprint

Cite this