@inproceedings{5685ddc9c4704637b34d4ac83f13beee,
title = "Effects of stress on formation of silicides on silicon-on-insulator wafers",
abstract = "Effects of stress on the formation of titanium and nickel silicides on silicon-on-insulator (SOI) wafers have been investigated by sheet resistance measurements, glancing-angle x-ray diffraction analysis and transmission electron microscopy. Tensile stress was induced by the difference of thermal expansion coefficients of Si and SiO2. The thinner the top silicon layer, the higher tensile stress was induced. The formation of both Ti and Ni silicides was found to be enhanced by the tensile stress. The results indicated that the tensile stress promotes the atomic diffusion at the interface to facilitate the formation of metal silicides.",
author = "Liu, {C. H.} and Liew, {S. C.} and Cheng, {S. L.} and Chen, {L. J.}",
note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",
year = "2001",
doi = "10.1109/ICSICT.2001.981522",
language = "???core.languages.en_GB???",
series = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "477--482",
editor = "Hiroshi Iwai and Paul Yu and Bing-Zong Li and Guo-Ping Ru and Xin-Ping Qu",
booktitle = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",
}