Effects of spacer thickness on the performance of InGaAs/GaAs quantum dot lasers

Nien Tze Yeh; Wei Shen Liu; Shu Han Chen; Jen Inn Chyi

Effects of spacer thickness on the performance of InGaAs/GaAs quantum dot lasers

Nien Tze Yeh, Wei Shen Liu, Shu Han Chen, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

It is found that the performance of self-assembled In_0.5Ga_0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

Original language	English
Pages (from-to)	J3.21.1-J3.21.6
Journal	Materials Research Society Symposium - Proceedings
Volume	642
State	Published - 2001
Event	Semiconductor Quantum Dots II - Boston, MA, United States Duration: 27 Nov 2000 → 30 Nov 2000

Cite this

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title = "Effects of spacer thickness on the performance of InGaAs/GaAs quantum dot lasers",

abstract = "It is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.",

author = "Yeh, {Nien Tze} and Liu, {Wei Shen} and Chen, {Shu Han} and Chyi, {Jen Inn}",

year = "2001",

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volume = "642",

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T1 - Effects of spacer thickness on the performance of InGaAs/GaAs quantum dot lasers

AU - Yeh, Nien Tze

AU - Liu, Wei Shen

AU - Chen, Shu Han

AU - Chyi, Jen Inn

PY - 2001

Y1 - 2001

N2 - It is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

AB - It is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

UR - http://www.scopus.com/inward/record.url?scp=19244377062&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:19244377062

SN - 0272-9172

VL - 642

SP - J3.21.1-J3.21.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Semiconductor Quantum Dots II

Y2 - 27 November 2000 through 30 November 2000

ER -

Effects of spacer thickness on the performance of InGaAs/GaAs quantum dot lasers

Abstract

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