Effects of RF coil position on the transport processes during the stages of sapphire Czochralski crystal growth

Chung Wei Lu, Jyh Chen Chen, Chien Hung Chen, Chun Hung Chen, Wen Ching Hsu, Che Ming Liu

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

The effect of the RF coil position during the stages of sapphire crystal growth process in an inductively heated Czochralski crystal growth furnace on the thermal and flow transport, the shape of the crystal-melt interface shape, and the power requirements is investigated numerically. The results show that although the maximum values of temperature and velocity decrease, the convexity of the crystal-melt interface increases as the crystal length grows. It is found that the least input power is required if the central position of the RF coil is maintained below the central position of the melt during the crystal growth process. Under such crystal growth conditions, the temperature gradients along the crystalline front are small.

Original languageEnglish
Pages (from-to)1074-1079
Number of pages6
JournalJournal of Crystal Growth
Volume312
Issue number8
DOIs
StatePublished - 1 Apr 2010

Keywords

  • A1. Numerical investigation
  • A2. Crystal growth
  • A2. Czochralski method
  • B1. Sapphire crystal

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