Effects of post-annealing on the structural and nanomechanical properties of Ga-doped ZnO thin films deposited on glass substrate by rf-magnetron sputtering

Szu Ko Wang, Ting Chun Lin, Sheng Rui Jian, Jenh Yih Juang, Jason S.C. Jang, Jiun Yi Tseng

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

In this study, the effects of post-annealing on the structure, surface morphology and nanomechanical properties of ZnO thin films doped with a nominal concentration of 3 at.% Ga (ZnO:Ga) are investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) and nanoindentation techniques. The ZnO:Ga thin films were deposited on the glass substrates at room temperature by radio frequency magnetron sputtering. Results revealed that the as-deposited ZnO:Ga thin films were polycrystalline albeit the low deposition temperature. Post-annealing carried out at 300, 400 and 500 °C, respectively, has resulted in progressive increase in both the average grain size and the surface roughness of the ZnO:Ga thin film, in addition to the improved thin films crystallinity. Moreover, the hardness and Young's modulus of ZnO:Ga thin films are measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The hardness and Young's modulus of ZnO:Ga thin films increased as the annealing temperature increased from 300 to 500 °C, with the best results being obtained at 500 °C.

Original languageEnglish
Pages (from-to)1261-1266
Number of pages6
JournalApplied Surface Science
Volume258
Issue number3
DOIs
StatePublished - 15 Nov 2011

Keywords

  • AFM
  • Hardness
  • Nanoindentation
  • XRD
  • ZnO:Ga thin films

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