Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides

M. N. Chang, K. C. Hsieh, T. E. Nee, J. I. Chyi

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Doping influences the point defect concentration which, in turn, affects the As precipitation in III-V arsenides. Bright-field images of several III-V arsenide semiconductor structures were analyzed as a function of annealing temperature and doping level. Results show that column III vacancies significantly affect the As precipitation in these semiconductors.

Original languageEnglish
Pages (from-to)2442-2447
Number of pages6
JournalJournal of Applied Physics
Volume86
Issue number5
DOIs
StatePublished - Sep 1999

Fingerprint

Dive into the research topics of 'Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides'. Together they form a unique fingerprint.

Cite this