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Effects of N
+
1 implantation on CoSi
2
contacts on shallow junctions
K. M. Chen
,
S. L. Cheng
, L. J. Chen
, B. Y. Tsui
Department of Chemical and Materials Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
1
Scopus citations
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+
1 implantation on CoSi
2
contacts on shallow junctions'. Together they form a unique fingerprint.
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Keyphrases
CoSi2
100%
Shallow Junction
100%
Thermal Stability
50%
Nitrogen Ion Implantation
33%
Annealing
16%
Surface Morphology
16%
Grain Boundary
16%
Suicide
16%
Nitrogen Effect
16%
Resistivity
16%
Sheet Resistance
16%
Grain Growth
16%
Growth Stability
16%
CoS2
16%
Pinhole-free
16%
Residual Defect
16%
Engineering
Shallow Junction
100%
Implanted Sample
100%
Ion Implantation
66%
Thin Films
33%
Surface Morphology
33%
Polycrystalline
33%
Sheet Resistance
33%
Material Science
Thermal Stability
100%
Ion Implantation
66%
Thin Films
33%
Annealing
33%
Surface Morphology
33%
Electrical Resistivity
33%
Grain Boundary
33%
Chemical Engineering
Sheet Resistance
100%
Film
100%