Effects of N+1 implantation on CoSi2 contacts on shallow junctions

K. M. Chen; S. L. Cheng; L. J. Chen; B. Y. Tsui

doi:10.1016/S0254-0584(98)00093-5

Effects of N⁺1 implantation on CoSi₂ contacts on shallow junctions

K. M. Chen, S. L. Cheng, L. J. Chen, B. Y. Tsui

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The effects of nitrogen ion implantation on CoSi₂ contacts on shallow junctions have been investigated. The formation, growth, stability and resistivity of suicides as well as the removal of residual defects have been studied. Nitrogen ion implantation was shown to improve the thermal stability of CoSi₂ thin films. The sheet resistance was found to be nearly constant in a wide range of temperature in N⁺ implanted samples. For Co on 30 keV N⁺ implanted samples, a continuous and pinhole-free polycrystalline CoS₂ layer was found to form in all samples after annealing at 700-900 °C. The thermal stability of the CoSi₂ layer in tha BFN₂⁺-N⁺ samples was better than samples implanted with N + or As⁺-N⁺. The improvement in the thermal stability and surface morphology of CoSi₂ in BF₂⁺-N⁺ samples is attributed to the presence of fluorine bubbles at CoSi₂ grain boundaries, which impeded the grain growth.

Original language	English
Pages (from-to)	71-75
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	54
Issue number	1-3
DOIs	https://doi.org/10.1016/S0254-0584(98)00093-5
State	Published - Jul 1998

Keywords

Nitrogen ion implantation
Residual defects
Shallow junctions
Suicides

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10.1016/S0254-0584(98)00093-5

Cite this

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title = "Effects of N+1 implantation on CoSi2 contacts on shallow junctions",

abstract = "The effects of nitrogen ion implantation on CoSi2 contacts on shallow junctions have been investigated. The formation, growth, stability and resistivity of suicides as well as the removal of residual defects have been studied. Nitrogen ion implantation was shown to improve the thermal stability of CoSi2 thin films. The sheet resistance was found to be nearly constant in a wide range of temperature in N+ implanted samples. For Co on 30 keV N+ implanted samples, a continuous and pinhole-free polycrystalline CoS2 layer was found to form in all samples after annealing at 700-900 °C. The thermal stability of the CoSi2 layer in tha BFN2+-N+ samples was better than samples implanted with N + or As+-N+. The improvement in the thermal stability and surface morphology of CoSi2 in BF2+-N+ samples is attributed to the presence of fluorine bubbles at CoSi2 grain boundaries, which impeded the grain growth.",

keywords = "Nitrogen ion implantation, Residual defects, Shallow junctions, Suicides",

author = "Chen, {K. M.} and Cheng, {S. L.} and Chen, {L. J.} and Tsui, {B. Y.}",

note = "Funding Information: The researchw as supportedb y the National ScienceC otin-cil through Grant No. NSC%-2215E007-015 and Electronics Researcha nd Service Organization.",

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TY - JOUR

T1 - Effects of N+1 implantation on CoSi2 contacts on shallow junctions

AU - Chen, K. M.

AU - Cheng, S. L.

AU - Chen, L. J.

AU - Tsui, B. Y.

N1 - Funding Information: The researchw as supportedb y the National ScienceC otin-cil through Grant No. NSC%-2215E007-015 and Electronics Researcha nd Service Organization.

PY - 1998/7

Y1 - 1998/7

N2 - The effects of nitrogen ion implantation on CoSi2 contacts on shallow junctions have been investigated. The formation, growth, stability and resistivity of suicides as well as the removal of residual defects have been studied. Nitrogen ion implantation was shown to improve the thermal stability of CoSi2 thin films. The sheet resistance was found to be nearly constant in a wide range of temperature in N+ implanted samples. For Co on 30 keV N+ implanted samples, a continuous and pinhole-free polycrystalline CoS2 layer was found to form in all samples after annealing at 700-900 °C. The thermal stability of the CoSi2 layer in tha BFN2+-N+ samples was better than samples implanted with N + or As+-N+. The improvement in the thermal stability and surface morphology of CoSi2 in BF2+-N+ samples is attributed to the presence of fluorine bubbles at CoSi2 grain boundaries, which impeded the grain growth.

AB - The effects of nitrogen ion implantation on CoSi2 contacts on shallow junctions have been investigated. The formation, growth, stability and resistivity of suicides as well as the removal of residual defects have been studied. Nitrogen ion implantation was shown to improve the thermal stability of CoSi2 thin films. The sheet resistance was found to be nearly constant in a wide range of temperature in N+ implanted samples. For Co on 30 keV N+ implanted samples, a continuous and pinhole-free polycrystalline CoS2 layer was found to form in all samples after annealing at 700-900 °C. The thermal stability of the CoSi2 layer in tha BFN2+-N+ samples was better than samples implanted with N + or As+-N+. The improvement in the thermal stability and surface morphology of CoSi2 in BF2+-N+ samples is attributed to the presence of fluorine bubbles at CoSi2 grain boundaries, which impeded the grain growth.

KW - Nitrogen ion implantation

KW - Residual defects

KW - Shallow junctions

KW - Suicides

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U2 - 10.1016/S0254-0584(98)00093-5

DO - 10.1016/S0254-0584(98)00093-5

M3 - 期刊論文

AN - SCOPUS:0032120981

SN - 0254-0584

VL - 54

SP - 71

EP - 75

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 1-3

ER -