Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions

L. W. Cheng; S. L. Cheng; J. Y. Chen; L. J. Chen; B. Y. Tsui

doi:10.1016/S0040-6090(99)00546-5

Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions

L. W. Cheng, S. L. Cheng, J. Y. Chen, L. J. Chen, B. Y. Tsui

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Conference article › peer-review

36 Scopus citations

Abstract

The effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions have been investigated. The phase formation of nickel silicides on nitrogen implanted (001)Si was suppressed and shifted to a higher temperature compared to samples not implanted with nitrogen. The sheet resistance was found to be nearly constant in a wide range of temperature in nitrogen ion implanted samples. It indicates that low-resistivity NiSi is the dominant phase for the 1×10¹⁵ N⁺/cm² implanted samples annealed at 400-750 °C and for the 2×10¹⁵ N₂⁺/cm² implanted samples annealed at 400-800 °C. The diffusion of nickel atoms is thought to be retarded by the presence of nitrogen atoms. The presence of nitrogen ion can also improve the thermal stability of nickel disilicide. The effects of nitrogen on nickel silicide formation become more pronounced with an increase in the nitrogen dose up to a certain value.

Original language	English
Pages (from-to)	412-416
Number of pages	5
Journal	Thin Solid Films
Volume	355
DOIs	https://doi.org/10.1016/S0040-6090(99)00546-5
State	Published - 1 Nov 1999
Event	Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA Duration: 12 Apr 1999 → 15 Apr 1999

Access to Document

10.1016/S0040-6090(99)00546-5

Cite this

@article{1b77e1c1b0a34765b3332644fa7b25ff,

title = "Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions",

abstract = "The effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions have been investigated. The phase formation of nickel silicides on nitrogen implanted (001)Si was suppressed and shifted to a higher temperature compared to samples not implanted with nitrogen. The sheet resistance was found to be nearly constant in a wide range of temperature in nitrogen ion implanted samples. It indicates that low-resistivity NiSi is the dominant phase for the 1×1015 N+/cm2 implanted samples annealed at 400-750 °C and for the 2×1015 N2+/cm2 implanted samples annealed at 400-800 °C. The diffusion of nickel atoms is thought to be retarded by the presence of nitrogen atoms. The presence of nitrogen ion can also improve the thermal stability of nickel disilicide. The effects of nitrogen on nickel silicide formation become more pronounced with an increase in the nitrogen dose up to a certain value.",

author = "Cheng, {L. W.} and Cheng, {S. L.} and Chen, {J. Y.} and Chen, {L. J.} and Tsui, {B. Y.}",

note = "Funding Information: The research was supported by the National Science Council through a grant No. NSC88-2215-E007-010 and the Electronics Research and Service Organization. ; null ; Conference date: 12-04-1999 Through 15-04-1999",

year = "1999",

month = nov,

day = "1",

doi = "10.1016/S0040-6090(99)00546-5",

language = "???core.languages.en_GB???",

volume = "355",

pages = "412--416",

journal = "Thin Solid Films",

issn = "0040-6090",

}

TY - JOUR

T1 - Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions

AU - Cheng, L. W.

AU - Cheng, S. L.

AU - Chen, J. Y.

AU - Chen, L. J.

AU - Tsui, B. Y.

N1 - Funding Information: The research was supported by the National Science Council through a grant No. NSC88-2215-E007-010 and the Electronics Research and Service Organization.

PY - 1999/11/1

Y1 - 1999/11/1

N2 - The effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions have been investigated. The phase formation of nickel silicides on nitrogen implanted (001)Si was suppressed and shifted to a higher temperature compared to samples not implanted with nitrogen. The sheet resistance was found to be nearly constant in a wide range of temperature in nitrogen ion implanted samples. It indicates that low-resistivity NiSi is the dominant phase for the 1×1015 N+/cm2 implanted samples annealed at 400-750 °C and for the 2×1015 N2+/cm2 implanted samples annealed at 400-800 °C. The diffusion of nickel atoms is thought to be retarded by the presence of nitrogen atoms. The presence of nitrogen ion can also improve the thermal stability of nickel disilicide. The effects of nitrogen on nickel silicide formation become more pronounced with an increase in the nitrogen dose up to a certain value.

AB - The effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions have been investigated. The phase formation of nickel silicides on nitrogen implanted (001)Si was suppressed and shifted to a higher temperature compared to samples not implanted with nitrogen. The sheet resistance was found to be nearly constant in a wide range of temperature in nitrogen ion implanted samples. It indicates that low-resistivity NiSi is the dominant phase for the 1×1015 N+/cm2 implanted samples annealed at 400-750 °C and for the 2×1015 N2+/cm2 implanted samples annealed at 400-800 °C. The diffusion of nickel atoms is thought to be retarded by the presence of nitrogen atoms. The presence of nitrogen ion can also improve the thermal stability of nickel disilicide. The effects of nitrogen on nickel silicide formation become more pronounced with an increase in the nitrogen dose up to a certain value.

UR - http://www.scopus.com/inward/record.url?scp=0033361221&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(99)00546-5

DO - 10.1016/S0040-6090(99)00546-5

M3 - 會議論文

AN - SCOPUS:0033361221

SN - 0040-6090

VL - 355

SP - 412

EP - 416

JO - Thin Solid Films

JF - Thin Solid Films

Y2 - 12 April 1999 through 15 April 1999

ER -

Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions

Abstract

Access to Document

Fingerprint

Cite this