Effects of microwave power on thermal annealing behaviors of hydrogenated amorphous silicon

Ping Jung Wu; I. Chen Chen; Chien Chieh Lee; Jenq Yang Chang; Tomi T. Li; Chiung Chieh Su

doi:10.1149/1.3553348

Effects of microwave power on thermal annealing behaviors of hydrogenated amorphous silicon

Ping Jung Wu, I. Chen Chen, Chien Chieh Lee, Jenq Yang Chang, Tomi T. Li, Chiung Chieh Su

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this study, we have investigated the recrystallization behaviors of hydrogenated amorphous silicon (a-Si:H) films by post-growth thermal annealing as a function of microwave power using electron cyclotron resonance chemical vapor deposition (ECRCVD). The crytallinity of annealed a-Si:H films depends on the porosity of the as-deposited thin films. We suggested that the film with high porosity has lowest crystallinity due to strong oxygen diffusion and formation of SiO_x inside the film.

Original language	English
Title of host publication	Photovoltaics for the 21st Century 6\
Publisher	Electrochemical Society Inc.
Pages	65-69
Number of pages	5
Edition	17
ISBN (Electronic)	9781566778732
ISBN (Print)	9781607682233
DOIs	https://doi.org/10.1149/1.3553348
State	Published - 2010
Event	Photovoltaics for the 21st Century 6 - 218th ECS Meeting - Las Vegas, NV, United States Duration: 10 Oct 2010 → 15 Oct 2010

Publication series

Name	ECS Transactions
Number	17
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Photovoltaics for the 21st Century 6 - 218th ECS Meeting
Country/Territory	United States
City	Las Vegas, NV
Period	10/10/10 → 15/10/10

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10.1149/1.3553348

Cite this

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title = "Effects of microwave power on thermal annealing behaviors of hydrogenated amorphous silicon",

abstract = "In this study, we have investigated the recrystallization behaviors of hydrogenated amorphous silicon (a-Si:H) films by post-growth thermal annealing as a function of microwave power using electron cyclotron resonance chemical vapor deposition (ECRCVD). The crytallinity of annealed a-Si:H films depends on the porosity of the as-deposited thin films. We suggested that the film with high porosity has lowest crystallinity due to strong oxygen diffusion and formation of SiOx inside the film.",

author = "Wu, {Ping Jung} and Chen, {I. Chen} and Lee, {Chien Chieh} and Chang, {Jenq Yang} and Li, {Tomi T.} and Su, {Chiung Chieh}",

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isbn = "9781607682233",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

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note = "Photovoltaics for the 21st Century 6 - 218th ECS Meeting ; Conference date: 10-10-2010 Through 15-10-2010",

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Wu, PJ, Chen, IC , Lee, CC, Chang, JY, Li, TT & Su, CC 2010, Effects of microwave power on thermal annealing behaviors of hydrogenated amorphous silicon. in Photovoltaics for the 21st Century 6\. 17 edn, ECS Transactions, no. 17, vol. 33, Electrochemical Society Inc., pp. 65-69, Photovoltaics for the 21st Century 6 - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3553348

Effects of microwave power on thermal annealing behaviors of hydrogenated amorphous silicon. / Wu, Ping Jung; Chen, I. Chen ; Lee, Chien Chieh et al.
Photovoltaics for the 21st Century 6\. 17. ed. Electrochemical Society Inc., 2010. p. 65-69 (ECS Transactions; Vol. 33, No. 17).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Su, Chiung Chieh

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AB - In this study, we have investigated the recrystallization behaviors of hydrogenated amorphous silicon (a-Si:H) films by post-growth thermal annealing as a function of microwave power using electron cyclotron resonance chemical vapor deposition (ECRCVD). The crytallinity of annealed a-Si:H films depends on the porosity of the as-deposited thin films. We suggested that the film with high porosity has lowest crystallinity due to strong oxygen diffusion and formation of SiOx inside the film.

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T2 - Photovoltaics for the 21st Century 6 - 218th ECS Meeting

Y2 - 10 October 2010 through 15 October 2010

ER -

Effects of microwave power on thermal annealing behaviors of hydrogenated amorphous silicon

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