Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy

S. W. Lee, H. C. Chen, L. J. Chen, Y. H. Peng, C. H. Kuan, H. H. Cheng

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Abstract

The effect of thickness of a low-temperature silicon (LT-Si) buffer layer on the growth of SiGe overlayer was investigated. The solid-source molecular beam epitaxy method was used to grow 300-nm-thick Si0.7Ge0.3 films on 50- to 300-nm-thick Lt-Si buffer layers at 450 °C. Transmission electron microscopy, Raman scattering and x-ray rocking curve measurements were used to study the effects of LT-Si buffer layer thickness on the quality of the SiGe layer. It was found that surface roughness was independent of the LT-Si thickness and the threading dislocation density decreases with the thickness of the LT-Si buffer.

Original languageEnglish
Pages (from-to)6880-6885
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number11
DOIs
StatePublished - 1 Dec 2002

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