Effects of leakage current and Schottky-like ohmic contact on the characterization of Al_0.17Ga_0.83N/GaN HBTs

Physics & Astronomy

• bipolar transistors 60%
• heterojunctions 49%
• electric contacts 49%
• leakage 46%
• accumulators 44%
• characterization 31%
• emitters 28%
• plots 18%
• output 13%
• mesas 12%
• low currents 12%
• metalorganic chemical vapor deposition 10%
• high current 10%
• inclusions 8%
• simulation 8%
• etching 8%

Engineering & Materials Science

• Ohmic contacts 85%
• Heterojunction bipolar transistors 66%
• Leakage currents 60%
• Metallorganic chemical vapor deposition 29%
• Dry etching 27%
• Characterization (materials science) 16%
• Computer simulation 10%

Chemical Compounds

• Current Gain 100%
• Leakage Current 73%
• Simulation 35%
• Etching 25%
• Chemical Vapour Deposition 25%