Nitride-based vertical cavity surface emitting lasers (VCSEL) with hybrid mirror has been investigated. We further measured the as-grown samples (without top dielectric distributed Bragg reflector) by μ-photoluminescence, scanning near-field optical microscopy, and cathodoluminescence (CL). By different excitation power density, the experimental results indicated that the VCSEL devices have different lasing modes and spot sizes, represented inhomogeneous gain and loss distribution in the whole structure. The non-uniform emission intensity distribution including several bright spots of about 1 to 2 μm was observed for both VCSEL devices and as-grown samples, which was obtained from CL measurement, due to the effect of indium clusters and non-uniform micro-cavity resonant in InGaN multi-quantum wells (MQWs). The results show the significant influence on commercial applications such as light emitting diodes, lasers devices and so on.