Effects of inhomogeneous gain and loss on nitride-based vertical-cavity surface emitting lasers

Shih Wei Chen; Ming Hua Lo; Tsung Ting Kao; Chih Chiang Kao; Jung Tang Chu; Li Fan Lin; Hung Wen Huang; Tien Chang Lu; Hao Chung Kuo; Shing Chung Wang; Chien Cheng Kuo; Cheng Chung Lee

doi:10.1143/JJAP.48.04C127

Effects of inhomogeneous gain and loss on nitride-based vertical-cavity surface emitting lasers

Shih Wei Chen, Ming Hua Lo, Tsung Ting Kao, Chih Chiang Kao, Jung Tang Chu, Li Fan Lin, Hung Wen Huang, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang, Chien Cheng Kuo, Cheng Chung Lee

Department of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

Nitride-based vertical cavity surface emitting lasers (VCSEL) with hybrid mirror has been investigated. We further measured the as-grown samples (without top dielectric distributed Bragg reflector) by μ-photoluminescence, scanning near-field optical microscopy, and cathodoluminescence (CL). By different excitation power density, the experimental results indicated that the VCSEL devices have different lasing modes and spot sizes, represented inhomogeneous gain and loss distribution in the whole structure. The non-uniform emission intensity distribution including several bright spots of about 1 to 2 μm was observed for both VCSEL devices and as-grown samples, which was obtained from CL measurement, due to the effect of indium clusters and non-uniform micro-cavity resonant in InGaN multi-quantum wells (MQWs). The results show the significant influence on commercial applications such as light emitting diodes, lasers devices and so on.

Original language	English
Article number	04C127
Journal	Japanese Journal of Applied Physics
Volume	48
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.48.04C127
State	Published - Apr 2009

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10.1143/JJAP.48.04C127

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title = "Effects of inhomogeneous gain and loss on nitride-based vertical-cavity surface emitting lasers",

abstract = "Nitride-based vertical cavity surface emitting lasers (VCSEL) with hybrid mirror has been investigated. We further measured the as-grown samples (without top dielectric distributed Bragg reflector) by μ-photoluminescence, scanning near-field optical microscopy, and cathodoluminescence (CL). By different excitation power density, the experimental results indicated that the VCSEL devices have different lasing modes and spot sizes, represented inhomogeneous gain and loss distribution in the whole structure. The non-uniform emission intensity distribution including several bright spots of about 1 to 2 μm was observed for both VCSEL devices and as-grown samples, which was obtained from CL measurement, due to the effect of indium clusters and non-uniform micro-cavity resonant in InGaN multi-quantum wells (MQWs). The results show the significant influence on commercial applications such as light emitting diodes, lasers devices and so on.",

author = "Chen, {Shih Wei} and Lo, {Ming Hua} and Kao, {Tsung Ting} and Kao, {Chih Chiang} and Chu, {Jung Tang} and Lin, {Li Fan} and Huang, {Hung Wen} and Lu, {Tien Chang} and Kuo, {Hao Chung} and Wang, {Shing Chung} and Kuo, {Chien Cheng} and Lee, {Cheng Chung}",

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doi = "10.1143/JJAP.48.04C127",

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volume = "48",

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TY - JOUR

T1 - Effects of inhomogeneous gain and loss on nitride-based vertical-cavity surface emitting lasers

AU - Chen, Shih Wei

AU - Lo, Ming Hua

AU - Kao, Tsung Ting

AU - Kao, Chih Chiang

AU - Chu, Jung Tang

AU - Lin, Li Fan

AU - Huang, Hung Wen

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

AU - Kuo, Chien Cheng

AU - Lee, Cheng Chung

PY - 2009/4

Y1 - 2009/4

N2 - Nitride-based vertical cavity surface emitting lasers (VCSEL) with hybrid mirror has been investigated. We further measured the as-grown samples (without top dielectric distributed Bragg reflector) by μ-photoluminescence, scanning near-field optical microscopy, and cathodoluminescence (CL). By different excitation power density, the experimental results indicated that the VCSEL devices have different lasing modes and spot sizes, represented inhomogeneous gain and loss distribution in the whole structure. The non-uniform emission intensity distribution including several bright spots of about 1 to 2 μm was observed for both VCSEL devices and as-grown samples, which was obtained from CL measurement, due to the effect of indium clusters and non-uniform micro-cavity resonant in InGaN multi-quantum wells (MQWs). The results show the significant influence on commercial applications such as light emitting diodes, lasers devices and so on.

AB - Nitride-based vertical cavity surface emitting lasers (VCSEL) with hybrid mirror has been investigated. We further measured the as-grown samples (without top dielectric distributed Bragg reflector) by μ-photoluminescence, scanning near-field optical microscopy, and cathodoluminescence (CL). By different excitation power density, the experimental results indicated that the VCSEL devices have different lasing modes and spot sizes, represented inhomogeneous gain and loss distribution in the whole structure. The non-uniform emission intensity distribution including several bright spots of about 1 to 2 μm was observed for both VCSEL devices and as-grown samples, which was obtained from CL measurement, due to the effect of indium clusters and non-uniform micro-cavity resonant in InGaN multi-quantum wells (MQWs). The results show the significant influence on commercial applications such as light emitting diodes, lasers devices and so on.

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U2 - 10.1143/JJAP.48.04C127

DO - 10.1143/JJAP.48.04C127

M3 - 期刊論文

AN - SCOPUS:77952481108

SN - 0021-4922

VL - 48

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 PART 2

M1 - 04C127

ER -

Effects of inhomogeneous gain and loss on nitride-based vertical-cavity surface emitting lasers

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