Effects of illumination during anodization of porous silicon

C. Tsai; K. H. Li; J. C. Campbell; B. K. Hance; M. F. Arendt; J. M. White; S. L. Yau; A. J. Bard

doi:10.1007/BF02684209

Effects of illumination during anodization of porous silicon

C. Tsai, K. H. Li, J. C. Campbell, B. K. Hance, M. F. Arendt, J. M. White, S. L. Yau, A. J. Bard

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The effects of illumination during anodic etching of porous Si have been studied. For a fixed current density and anodization time, it has been observed that below a critical irradiance level, increasing the radiant flux density during anodization results in higher photoluminescence and a blue shift of the photoluminescence spectra. For irradiance above the critical value, the photoluminescence intensity decreases. Transmission Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy and atomic force microscopy have been employed to investigate the effects of illumination on the characteristics of porous Si.

Original language	English
Pages (from-to)	995-1000
Number of pages	6
Journal	Journal of Electronic Materials
Volume	21
Issue number	10
DOIs	https://doi.org/10.1007/BF02684209
State	Published - Oct 1992

Keywords

illumination effect
photoluminescence
Porous Si

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10.1007/BF02684209

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title = "Effects of illumination during anodization of porous silicon",

abstract = "The effects of illumination during anodic etching of porous Si have been studied. For a fixed current density and anodization time, it has been observed that below a critical irradiance level, increasing the radiant flux density during anodization results in higher photoluminescence and a blue shift of the photoluminescence spectra. For irradiance above the critical value, the photoluminescence intensity decreases. Transmission Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy and atomic force microscopy have been employed to investigate the effects of illumination on the characteristics of porous Si.",

keywords = "illumination effect, photoluminescence, Porous Si",

author = "C. Tsai and Li, {K. H.} and Campbell, {J. C.} and Hance, {B. K.} and Arendt, {M. F.} and White, {J. M.} and Yau, {S. L.} and Bard, {A. J.}",

year = "1992",

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TY - JOUR

T1 - Effects of illumination during anodization of porous silicon

AU - Tsai, C.

AU - Li, K. H.

AU - Campbell, J. C.

AU - Hance, B. K.

AU - Arendt, M. F.

AU - White, J. M.

AU - Yau, S. L.

AU - Bard, A. J.

PY - 1992/10

Y1 - 1992/10

N2 - The effects of illumination during anodic etching of porous Si have been studied. For a fixed current density and anodization time, it has been observed that below a critical irradiance level, increasing the radiant flux density during anodization results in higher photoluminescence and a blue shift of the photoluminescence spectra. For irradiance above the critical value, the photoluminescence intensity decreases. Transmission Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy and atomic force microscopy have been employed to investigate the effects of illumination on the characteristics of porous Si.

AB - The effects of illumination during anodic etching of porous Si have been studied. For a fixed current density and anodization time, it has been observed that below a critical irradiance level, increasing the radiant flux density during anodization results in higher photoluminescence and a blue shift of the photoluminescence spectra. For irradiance above the critical value, the photoluminescence intensity decreases. Transmission Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy and atomic force microscopy have been employed to investigate the effects of illumination on the characteristics of porous Si.

KW - illumination effect

KW - photoluminescence

KW - Porous Si

UR - http://www.scopus.com/inward/record.url?scp=0026932003&partnerID=8YFLogxK

U2 - 10.1007/BF02684209

DO - 10.1007/BF02684209

M3 - 期刊論文

AN - SCOPUS:0026932003

VL - 21

SP - 995

EP - 1000

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 10

ER -

Effects of illumination during anodization of porous silicon

Abstract

Keywords

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