Effects of illumination during anodization of porous silicon

C. Tsai, K. H. Li, J. C. Campbell, B. K. Hance, M. F. Arendt, J. M. White, S. L. Yau, A. J. Bard

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

The effects of illumination during anodic etching of porous Si have been studied. For a fixed current density and anodization time, it has been observed that below a critical irradiance level, increasing the radiant flux density during anodization results in higher photoluminescence and a blue shift of the photoluminescence spectra. For irradiance above the critical value, the photoluminescence intensity decreases. Transmission Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy and atomic force microscopy have been employed to investigate the effects of illumination on the characteristics of porous Si.

Original languageEnglish
Pages (from-to)995-1000
Number of pages6
JournalJournal of Electronic Materials
Volume21
Issue number10
DOIs
StatePublished - Oct 1992

Keywords

  • illumination effect
  • photoluminescence
  • Porous Si

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