Effects of GaSb surface preparation on the characteristics of HfO2Al2O3GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition

Wei Jen Hsueh, Cheng Yu Chen, Chao Min Chang, Jen Inn Chyi, Mao Lin Huang

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Abstract

The electrical, structural, and chemical properties of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) fabricated on Sb-rich (2 × 5) and Sb-stabilized (1 × 3) surfaces by atomic layer deposition are characterized. A combination of the transmission electron microscopic, x-ray photoelectron spectroscopic, and atomic force microscopic observations shows that the Sb-rich surface, with its excessive Sb atoms and clusters, leads to island deposition of the dielectric materials and results in the high leakage current of the MOSCAPs. For the MOSCAPs fabricated on the Sb-stabilized (1 × 3) surface, a density of interface traps as low as 8.03 × 1011cm-2eV-1 near the valence band and 1.86 × 1012cm-2eV-1 at the midgap is obtained as estimated by the conductance method.

Original languageEnglish
Article number01B106
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume35
Issue number1
DOIs
StatePublished - 1 Jan 2017

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