Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

Wei Ting Hsu; Yu An Liao; Feng Chang Hsu; Pei Chin Chiu; Jen Inn Chyi; Wen Hao Chang

doi:10.1063/1.3624464

Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

Wei Ting Hsu, Yu An Liao, Feng Chang Hsu, Pei Chin Chiu, Jen Inn Chyi, Wen Hao Chang

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications.

Original language	English
Article number	073108
Journal	Applied Physics Letters
Volume	99
Issue number	7
DOIs	https://doi.org/10.1063/1.3624464
State	Published - 15 Aug 2011

Access to Document

10.1063/1.3624464

Cite this

@article{6c0ab117f5a24b7b870c0f1cd36a7fc6,

title = "Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots",

abstract = "The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications.",

author = "Hsu, {Wei Ting} and Liao, {Yu An} and Hsu, {Feng Chang} and Chiu, {Pei Chin} and Chyi, {Jen Inn} and Chang, {Wen Hao}",

note = "Funding Information: This work was supported in part by the National Science Council of Taiwan under Grant No. NSC 99-2112-M-009-008-MY2. ",

year = "2011",

month = aug,

day = "15",

doi = "10.1063/1.3624464",

language = "???core.languages.en_GB???",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "7",

}

TY - JOUR

T1 - Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

AU - Hsu, Wei Ting

AU - Liao, Yu An

AU - Hsu, Feng Chang

AU - Chiu, Pei Chin

AU - Chyi, Jen Inn

AU - Chang, Wen Hao

N1 - Funding Information: This work was supported in part by the National Science Council of Taiwan under Grant No. NSC 99-2112-M-009-008-MY2.

PY - 2011/8/15

Y1 - 2011/8/15

N2 - The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications.

AB - The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications.

UR - http://www.scopus.com/inward/record.url?scp=80052082750&partnerID=8YFLogxK

U2 - 10.1063/1.3624464

DO - 10.1063/1.3624464

M3 - 期刊論文

AN - SCOPUS:80052082750

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 073108

ER -

Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

Abstract

Access to Document

Fingerprint

Cite this