Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

Wei Ting Hsu, Yu An Liao, Feng Chang Hsu, Pei Chin Chiu, Jen Inn Chyi, Wen Hao Chang

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications.

Original languageEnglish
Article number073108
JournalApplied Physics Letters
Volume99
Issue number7
DOIs
StatePublished - 15 Aug 2011

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