Effects of dot height uniformity on the performance of 1.3 μm InAs quantum dot lasers

Wei Sheng Liu, Holin Chang, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have systematically investigated the growth parameters of InAs quantum dots (QDs) so as to preserve the uniformity of dot height for 1.3 μm QD laser diodes. Devices that are prepared using the optimized growth conditions exhibit threshold current as low as 50 mA, and internal quantum efficiency as high as 63% under continuous-wave operation.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
PublisherIEEE Computer Society
Pages784-787
Number of pages4
ISBN (Print)0780391993, 9780780391994
DOIs
StatePublished - 2005
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: 11 Jul 200515 Jul 2005

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume2

Conference

Conference2005 5th IEEE Conference on Nanotechnology
Country/TerritoryJapan
CityNagoya
Period11/07/0515/07/05

Keywords

  • Molecular beam epitaxy
  • Quantum dot lasers
  • Self-assembled quantum dots
  • Semiconductor lasers

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