Effects of dielectrics on the characteristics of large-area silicon microstrip sensors

Wen Chin Tsay, Yen Ann Chen, Li Hong Laih, Jyh Wong Hong, Augustine E. Chen, Willis T. Lin, Yuan Hann Chang, Suen R. Hou, Shih Liang Hsu, Chung Ren Li, Hsien Jen Ting, Song Tsang Chiang

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2 Scopus citations


An 8 × 4 cm2 single-sided silicon microstrip sensor with coupling capacitors and polysilicon bias resistors has been fabricated with planar technology. The oxide-nitride-oxide (ONO) films have been chosen to replace the usual SiU2 layer as the dielectric of the coupling capacitor. In conjunction with a reordering of the process sequence for layer formations, the proposed process could be used to fabricate sensors with self-moisture protection and free from the effect of pinholes. From the measurement results of special p-n junction test structures, we found that their leakage current was dominated by that of the sidewall one. Stress measurement and Sirtl-etch analysis revealed that the sidewall leakage current was increased by the dielectric stress and implantation damage. A boron solid-source predeposition process was employed to reduce this leakage current. From the results of electrical measurement and beam test on sensors, it was shown that the proposed process was able to produce sensors having very good performance.

Original languageEnglish
Pages (from-to)1077-1081
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number2 SUPPL. B
StatePublished - Feb 1996


  • Breakdown voltage
  • Dielectric stress
  • Implantation damage
  • Leakage current
  • ONO (oxide-nitride-oxide)
  • Signal-to-noise ratio
  • Silicon microstrip sensor


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