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The effects of using a balanced/unbalanced cusp magnetic field (CMF) along with crystal-crucible counter-/iso-rotation on the heat, flow, and oxygen distributions during Czochralski (Cz) growth of an 8-inch silicon crystal are numerically investigated. One counter-rotation example is compared to iso-rotation cases. In both rotation modes, the vertical flow in the central melt region is strengthened while the buoyancy-driven melt flow is weakened under a cusp field. The CMF has a stronger effect on the oxygen content when there is a large difference in rotation rate between the crystal and the crucible (nS − nC). This is because a higher value of (nS − nC) induces stronger melt convection and hence, the Lorentz force has a more significant effect on a fast melt flow than a slow one. Although diffusion significantly influences oxygen transport in the melt at low crystal iso-rotation rates, different flow patterns and local melt velocities induced by different crystal iso-rotation speeds will modify the oxygen distribution. There is a slight change in the oxygen content at a low ingot iso-rotation rate with a CMF. In cases of iso-rotation, the radial oxygen content is enhanced more by an unbalanced CMF than a balanced one. Greater uniformity of the radial oxygen concentration is achieved applying iso-rotation with nS > nC under a CMF.
|Journal||Journal of Crystal Growth|
|State||Published - 1 Feb 2020|
- A1. Computer simulation
- A1. Convection
- A1. Magnetic field
- A1. Mass transfer
- A2. Czochralski method
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- 1 Finished
Numerical Investigations of Impurity Transport Control during the Single Silicon Crystal Growth Process by Czochralski Method(2/2)
1/08/19 → 31/07/20