Effects of composite InGaAs and InAlAs layers on the emission wavelengths of quantum dots

R. B. Chiou, David M.T. Kuo

Research output: Contribution to journalArticlepeer-review

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Abstract

Ground-state emission wavelengths of pyramidal InAs quantum dots (QDs) with a base length of b and a height of h capped by composite InGaAs and InAlAs layers were in-vestigated theoretically in a one-band effective mass model framework. It was found that the ground-state emission wavelengths depend not only on the h/b ratio, but also on the thickness and position of the InGaAs and InAlAs layers. The maximum transition energy separation between the QD ground- and first-excited states appears in the composite InGaAs and InAlAs layers, but not on a single InGaAs or InAlAs overgrown layer. Such a result is attributed to the degree of delocalization for the first excited state being different from that of the ground state.

Original languageEnglish
Pages (from-to)348-355
Number of pages8
JournalChinese Journal of Physics
Volume46
Issue number3
StatePublished - Jun 2008

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