Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

Y. M. Hsin; H. T. Hsu; K. P. Hseuh; W. B. Tang; C. C. Fan; C. H. Wang; C. W. Chen; N. Y. Li

doi:10.1007/s11664-003-0228-6

Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

Y. M. Hsin, H. T. Hsu, K. P. Hseuh, W. B. Tang, C. C. Fan, C. H. Wang, C. W. Chen, N. Y. Li

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Abstract

The effects of rapid thermal annealing (RTA) on InGaP/InGaAsN heterojunction bipolar transistors (HBTs) with a carbon-doped base have been studied. The hydrogen and nitrogen concentrations in the base, as well as the direct current (DC) and radio frequency (RF) device performance, were studied as a function of the annealing temperature. A 30-sec anneal at 650°C and 700°C under N₂ ambient effectively eliminates hydrogen from the base. As the annealing temperature is increased, the base sheet resistance decreases, and the corresponding maximum frequency of oscillation increases. For all annealing temperatures studied, we found degradation in the DC gain, presumably caused by the increase of nitrogen concentration in the base region.

Original language	English
Pages (from-to)	948-951
Number of pages	4
Journal	Journal of Electronic Materials
Volume	32
Issue number	9
DOIs	https://doi.org/10.1007/s11664-003-0228-6
State	Published - Sep 2003

Keywords

Heterojunction bipolar transistor
InGaAsN

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10.1007/s11664-003-0228-6

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title = "Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors",

abstract = "The effects of rapid thermal annealing (RTA) on InGaP/InGaAsN heterojunction bipolar transistors (HBTs) with a carbon-doped base have been studied. The hydrogen and nitrogen concentrations in the base, as well as the direct current (DC) and radio frequency (RF) device performance, were studied as a function of the annealing temperature. A 30-sec anneal at 650°C and 700°C under N2 ambient effectively eliminates hydrogen from the base. As the annealing temperature is increased, the base sheet resistance decreases, and the corresponding maximum frequency of oscillation increases. For all annealing temperatures studied, we found degradation in the DC gain, presumably caused by the increase of nitrogen concentration in the base region.",

keywords = "Heterojunction bipolar transistor, InGaAsN",

author = "Hsin, {Y. M.} and Hsu, {H. T.} and Hseuh, {K. P.} and Tang, {W. B.} and Fan, {C. C.} and Wang, {C. H.} and Chen, {C. W.} and Li, {N. Y.}",

note = "Funding Information: This work was supported by the National Science Council and the Ministry of Education (Grant No. 89-E-FA06-1-4), Republic of China.",

year = "2003",

month = sep,

doi = "10.1007/s11664-003-0228-6",

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volume = "32",

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journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

AU - Hsin, Y. M.

AU - Hsu, H. T.

AU - Hseuh, K. P.

AU - Tang, W. B.

AU - Fan, C. C.

AU - Wang, C. H.

AU - Chen, C. W.

AU - Li, N. Y.

N1 - Funding Information: This work was supported by the National Science Council and the Ministry of Education (Grant No. 89-E-FA06-1-4), Republic of China.

PY - 2003/9

Y1 - 2003/9

N2 - The effects of rapid thermal annealing (RTA) on InGaP/InGaAsN heterojunction bipolar transistors (HBTs) with a carbon-doped base have been studied. The hydrogen and nitrogen concentrations in the base, as well as the direct current (DC) and radio frequency (RF) device performance, were studied as a function of the annealing temperature. A 30-sec anneal at 650°C and 700°C under N2 ambient effectively eliminates hydrogen from the base. As the annealing temperature is increased, the base sheet resistance decreases, and the corresponding maximum frequency of oscillation increases. For all annealing temperatures studied, we found degradation in the DC gain, presumably caused by the increase of nitrogen concentration in the base region.

AB - The effects of rapid thermal annealing (RTA) on InGaP/InGaAsN heterojunction bipolar transistors (HBTs) with a carbon-doped base have been studied. The hydrogen and nitrogen concentrations in the base, as well as the direct current (DC) and radio frequency (RF) device performance, were studied as a function of the annealing temperature. A 30-sec anneal at 650°C and 700°C under N2 ambient effectively eliminates hydrogen from the base. As the annealing temperature is increased, the base sheet resistance decreases, and the corresponding maximum frequency of oscillation increases. For all annealing temperatures studied, we found degradation in the DC gain, presumably caused by the increase of nitrogen concentration in the base region.

KW - Heterojunction bipolar transistor

KW - InGaAsN

UR - http://www.scopus.com/inward/record.url?scp=0141787951&partnerID=8YFLogxK

U2 - 10.1007/s11664-003-0228-6

DO - 10.1007/s11664-003-0228-6

M3 - 期刊論文

AN - SCOPUS:0141787951

SN - 0361-5235

VL - 32

SP - 948

EP - 951

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

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Keywords

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