Effect of the nanoscratch resistance of indium nitride thin films in the etching duration

Wen Nong Hsu, Teng Shih Shih

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


This study present the nanotribological behavior of single-crystalline indium nitride (InN) films onto aluminum nitride (AlN) buffer layers on Si(1 1 1) substrates. The surface morphology and friction (μ) were analyzed using atomic force microscopy and nanoscratch system. It is confirmed that the normal force (F n ) measured values of μ of the InN films, from 10 to 60 min of etching duration, were in the range from 0.2 to 0.43 for F n = 2000 μN; 0.25 to 0.58 for F n = 6000 μN, respectively. It is suggested that the measured values of μ is slightly increased based on the etching duration due to the etching effect on the grain boundary and reduce film quality of InN films. From morphological observations, we compared the sliding resistance against contact-induced damage of the InN films in the presented ploughed of the area. It is confirmed that the contact sliding line is observable due to the increased F n , the following investigation with friction curve and lateral force is studied.

Original languageEnglish
Pages (from-to)610-615
Number of pages6
JournalApplied Surface Science
StatePublished - 15 Nov 2012


  • Friction
  • Indium nitride
  • Molecular beam epitaxy
  • Nanoscratch


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