Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips.©OSA 2016.
- Quoc Hung Pham
- , Jyh Chen Chen
- , Farn Shiun Hwu
- , Huy Bich Nguyen
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review