Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips.©OSA 2016.

Quoc Hung Pham, Jyh Chen Chen, Farn Shiun Hwu, Huy Bich Nguyen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The electrical and thermal behaviors of LED are systematically investigated using a numerical method. The focus is on how the temperature-dependent carrier recombination induces an efficiency droop. The thermal effect enhances the efficiency droop.

Original languageEnglish
Title of host publicationSolid-State Lighting, SSL 2016
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9780960038046
DOIs
StatePublished - 2016
EventSolid-State Lighting, SSL 2016 - Leipzig, Germany
Duration: 14 Nov 201617 Nov 2016

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceSolid-State Lighting, SSL 2016
Country/TerritoryGermany
CityLeipzig
Period14/11/1617/11/16

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