Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

Quoc Hung Pham, Jyh Chen Chen, Farn Shiun Hwu, Huy Bich Nguyen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The electrical and thermal behaviors of LED are systematically investigated using a numerical method. The focus is on how the temperature-dependent carrier recombination induces an efficiency droop. The thermal effect enhances the efficiency droop.

Original languageEnglish
Title of host publicationOptics for Solar Energy, OSE 2016
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9780960038046
DOIs
StatePublished - 2016
EventOptics for Solar Energy, OSE 2016 - Leipzig, Germany
Duration: 14 Nov 201617 Nov 2016

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceOptics for Solar Energy, OSE 2016
Country/TerritoryGermany
CityLeipzig
Period14/11/1617/11/16

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